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Typical Characteristics (Continued)
3.0
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
1.1
1.0
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.5
2.0
2.0
1.5
1.5
1.0
2. I D = 5.5 A
2. I D = 11 A
0.9
* Notes :
1. V GS = 0 V
2. I D = 250 ? A
1.0
0.5
0.5
0.0
-100
-50
0
50
100
* Notes :
1. V GS = 10 V
* Notes :
1. V GS = 10 V
150
200
T J , 0 50 100 [ C]
Junction Temperature
0.8
-100
-50
0
50
100
150
200
0.0
-100
-50
o
150
200
T J , Junction Temperature [ C]
T J , Junction Temperature [ C]
Figure 9. Safe Operating Area
o
o
Figure 10. Maximum Drain Current
vs. Case Temperature
10
25
2
10 ? s
100 ? s
20
10
1
Operation in This Area
1 ms
10 ms
DC 100 ms
15
is Limited by R DS(on)
10
10
0
* Notes :
1. T C = 25 C
2. T J = 150 C
o
o
3. Single Pulse
5
10
10
10
10
10
-1
0
1
2
3
0
25
50
75
100
125
150
T C , Case Temperature [ C]
V DS , Drain-Source Voltage [V]
o
Figure 11. Transient Thermal Response Curve
10
0
D = 0 .5
10
-1
0 .2
0 .1
0 .0 5
P DM
t 2
1 . Z ? JC (t) = 0 .4 4 C /W M a x .
10
-2
0 .0 2
0 .0 1
s in g le p u ls e
t 1
* N o te s :
o
2 . D u t y F a c t o r , D = t 1 /t 2
3 . T JM - T C = P D M * Z ? JC ( t)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
?2007 Fairchild Semiconductor Corporation
FDA20N50_F109 Rev. C1
4
www.fairchildsemi.com
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